We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services
Non-Polar Free-standing GaN Substrates ( a-plane and m-plane)
Specifications
| Item | GaN-FS-a | GaN-FS-m |
| Dimensions | 5.0mmx5.5mm | |
| 5.0mmx10.0mm | ||
| 5.0mmx20.0mm | ||
| Customized size | ||
| Thickness | 350±25um | |
| Orientation | a-plane±1° | m-plane±1° |
| TTV(Total Thickness Variation) | ≤15um | |
| BOW | ≤20um | |
| Conduction Type | N-Type | |
| Resistivity(300K) | <0.5Ω.cm | |
| Dislocation Density | Less than 5x106 cm-2 | |
| Useable Surface Area | >90% | |
| Polishing | Front Surfacce:Ra<0.2nm.Epi-ready polished Back Surface: Fine ground | |
| Package | Packaged in a class 100 clean room environment ,in single wafer containers ,under a nitrogen atmosphere. | |
Other thickness ,size and offcut options avaliable .
