We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services to domestic and foreign universities and research .
Free-standing GaN Substrates ( Customized Size)
Specifications
| Item | GaN-FS-10 | GaN-FS-15 |
| Dimensions | 10.0mm x 10.5mm | 14.0mm x 15.0mm |
| Marco Defect Density | A Level | 0 cm-2 |
| B Level | ≤2cm-2 | |
| Thickness | Rank 300 | 300± 25um |
| Rank 350 | 350± 25um | |
| Rank 400 | 400± 25um | |
| Orientation | C-axis(0001)±0.5° | |
| TTV(Total Thickness Variation) | ≤15um | |
| BOW | ≤20um | |
| Conuction Type | N-type | Semi-Insulating |
| Resistivity(300K) | <0.5Ω.cm | >106Ω.cm |
| Dislocation Density | Less than 5 x 106 cm-2 | |
| Useable Surface Area | >90% | |
| Polishing | Front Surface: Ra<0.2nm.Epi-ready polished Back Surface:Fine ground | |
| Package | Package in a class 100 clean room environment ,in single wafer containers ,under a nitrogen atmosphere. | |
5.0mm x 5.5mm is available and other size can be customized.
| Item | GaN-FS-N-1.5 | |||
| Dimensions | Φ25.4mm±0.5mm | Φ38.1mm± 0.5mm | Φ40.0mm ±0.5mm | Φ45.0mm ±0.5mm |
| Marco Defect Density | A Level | ≤2cm-2 | ||
| B Level | >2cm-2 | |||
| Thickness | 350±25um | |||
| Orientation | C-axis(0001)±0.5° | |||
| Orientation | (1-100)±0.5° 8±1mm | (1-100)±0.5° 12±1mm | (1-100)±0.5° 14±1mm | (1-100)±0.5° 14±1mm |
| Secondary Orientation Flat | (11-20)±3° 4±1mm | (11-20)±3° 6±1mm | (11-20)±3° 7±1mm | (11-20)±3° 7±1mm |
| TTV(Total Thickness Variation) | ≤15um | |||
| BOW | ≤20um | |||
| Conduction Type | N-Type | Semi-Insulating | ||
| Resistivity(300K) | <0.5Ω.cm | >106Ω.cm | ||
| Dislocation Density | Less than 5 x 106 cm-2 | |||
| Useable Surface Area | >90% | |||
| Polishing | Front Surface : Ra<0.2nm. Epi-ready polished Back Surface: Fine ground | |||
| Package | Package in a class 100 clean room environment ,in single wafer containers ,under a nitrogen atmosphere . | |||
