SiO2 single crystal wafer is an excellent substrate for microwave filters in the wireless communication industry.
| Typical Physical Properties: | |
| Crystal Structure | hexagonal |
| Growth Method | hydrothermal method |
| Lattice Constant | a=4.914Å c=5.405 Å |
| Density | 2.684g/cm3 |
| Hardness | 7（mohs） |
| Heat Capacity | 0.18cal/gm |
| Melt Point | 1610℃ (Phase transition point:573.1℃) |
| heat conductivity | 0.0033cal/cm℃ |
| thermoelectricity | 1200uv/℃（300℃） |
| refractive index | 1.544 |
| coefficient of thermal expansion | α11：13.71×106 / ℃ α33：7.48×106 /℃ |
| Q Value | 1.8×106 min |
| velocity of sound,Sound meter level | 3160（m/sec） |
| Frequency constant | 1661（kHz/mm） |
| Piezoelectric coupling | K2(%) BAW: 0.65 SAW: 0.14 |
| wrappage | IEC Gread ∣∣ |
| standard product | |
| Orientation | Y, X or Z cut, rotate any value within the range of 30º~42.75 º ±5 minutes |
| Main positioning edge: Orientation according to customer requirements ±30 minutes | |
| Secondary positioning edge: Orientate according to customer requirements | |
| Seed crystal: located in the center, width <5mm, height>66mm | |
| Polishing Side | Epitaxial polishing: single polishing or double polishing Ra<10Å Working area: substrate diameter -3mm Curvature: Φ3″<20um, Φ4″<30um There is no chipping in the working area, at the edge, the chipping width is <0.5mm Pits and scratches: each piece <3, each 100 pieces <20 |
| Standard Thickness | 0.5mm±0.05mm TTV<5um |
| Standard Diameter | Φ2″(50.8mm), Φ3″(76.2mm), Φ4″(100mm)±0.2mm Main positioning edge: 22±1.5mm (Φ3″) 32±3.0 (Φ4″) Secondary positioning edge: 10mm±1.5mm |
Please send us your request with below details to " sales@mdlmaterials.com"
1. Size （Length / Width / Thickness)
2. Orientation
3. Polishing Side (SSP or DSP )
