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4 inch diameter silicon carbide (SiC) substrate

We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services .

4 inch diameter silicon carbide (SiC) substrate specification

Grade
Zero MPD
Production
Research Grade
Dummy Grade
Diameter
100.0mm±0.5mm
Thickness
4H-N
350um±25um
4H-SI
500um±25um
Wafer Orientation
On axis :<0001>±0.5°for 4H-SI
Off axis : 4.0°toward<1120>±0.5°for 4H-N
Micropipe Density
≤1cm-2
≤5cm-2
≤15cm-2
≤50cm-2
Resistivity 4H-N 4H-SI
0.015~0.028Ω!cm
≥1E5Ω!cm
Primary Flat
{10-10}±5.0°
Primary Flat Length
32.5mm±2.0mm
Secondary Flat Length
18.0mm±2.0mm
Secondary Flat Orientation
Silicon face up : 90 °CW from Prime flat ±5.0°
Edge exclusion
3mm
TTV/Bow/Warp
≤15um/≤25um/≤40um
Roughness
Polish Ra ≤1nm CMP Ra≤0.5nm
#Cracks by high intensity light
None
1 allowed ,≤2mm
Cumulative length ≤10mm,single length≤2mm
*Hex plates by high intensity light
Cumulative area ≤1%
Cumulative area ≤ 1%
Cumulative area ≤ 3%
*Polytype areas by high intensity light
None
Cumulative area ≤ 2%
Cumulative area ≤ 5%
*&Scratches by high intensity light
3 scratches to 1 x wafer diameter cumulative length
5 scratches to 1 x wafer diameter cumulative length
5scratches to 1 x wafer diameter cumulative length
Edge chip
None
3 allowed ,≤0.5mm each
5 allowed ,≤1mm each
Contamination by high intensity light
None

Note

*Defects limits apply to entire wafer surface except for the edge exclusion area .

#Defects shall be existed in the edge area ,only defect beyond of the prescribed scope could be considered as reject cause .

&the scratches should be checked on Si face only .


Product Name: 4 inch diameter silicon carbide (SiC) substrate

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