We can provide high temperature superconducting thin film substrate , magnetic thin films and ferroelectric thin film substrate , semiconductor crystal , optical crystal , laser crystal materials ,at the same time provide orientation and foreign universities and research institutes to provide high quality ( ultra smooth ,ultra smooth , ultra clean)
Free-standing GaN Substrates (Customized size)-GaN-FS-N-1.5
Specifications:
Item | GaN-FS-N-1.5 | |||
Dimensions | Φ25.4mm ± 0.5mm | Φ38.1mm ± 0.5mm | Φ40.0mm ± 0.5mm | Φ45.0mm ± 0.5mm |
Marco Defect Density | Alevel | <=2cm-2 | ||
B Level | >2 cm -2 | |||
Thickness | 350 ± 25 μm | |||
Orientation | C-axis(0001) ± 0.5° | |||
Orientation Flat | (1-100) ± 0.5° 8 ± 1mm | (1-100) ± 0.5° 12 ± 1mm | (1-100) ± 0.5° 14 ± 1mm | (1-100) ± 0.5° 14 ± 1mm |
Secondary Orientation Flat | (11-20) ± 3° 4 ± 1mm | (11-20) ± 3° 6 ± 1mm | (11-20) ± 3° 7 ± 1mm | (11-20) ± 3° 7 ± 1mm |
TTV(Total Thickness Variation) | <=15 μm | |||
BOW | <=20 μm | |||
Conduction Type | N-type | Semi-Insulating | ||
Resistivity(300K) | <0.5 Ω .cm | >106 Ω .cm | ||
Dislocation Density | Less than 5x106 cm-2 | |||
Useable Surface Area | > 90% | |||
Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |||
Packag | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |||
Please send us your request with below details to " sales@mdlmaterials.com"
1. Size with tolerance (Diameter / Thickness /layer thickness )
2. Type
3. Orientation
4. Electrical resistivity
5. Polishing Side (SSP or DSP )
6. Quantity
