We can provide high temperature superconducting thin film substrate , magnetic thin films and ferroelectric thin film substrate , semiconductor crystal , optical crystal , laser crystal materials ,at the same time provide orientation and foreign universities and research institutes to provide high quality ( ultra smooth ,ultra smooth , ultra clean)
2 inch Free-Standing GaN Wafers
Specifications:
| Item | GaN-FS-N | GaN-FS-SI |
| Dimensions | Φ50.8mm±1mm | |
| Marco Defect Density | A Level | ≤2 cm-2 |
| B Level | > 2 cm-2 | |
| Thickness | 350± 25um | |
| Orientation | C-axis (0001)±0.5° | |
| Orientation Flat | (1-100)±0.5°,16.0±1.0mm | |
| Secondary Orientation Flat | (11-20)±3°, 8.0±1.0mm | |
| TTV (Total Thickness Variation ) | ≤15um | |
| BOW | ≤ 20 um | |
| Conduction Type | N-Type | Semi-Insulating |
| Resistivity (300K) | <0.5Ω·cm | >106Ω·cm |
| Dislocation Density | Less than 5 x 106 cm-2 | |
| Usable Surface Area | > 90% | |
| Polishing | Front Surface : Ra <0.2 nm . Epi-ready polished Back Surface : Fine ground | |
| Package | Packaged in a class 100 clean room environment ,in single wafer containers ,under a nitrogen atmosphere . | |
Please send us your request with below details to " sales@mdlmaterials.com"
1. Size with tolerance (Diameter / Thickness /layer thickness )
2. Type
3. Orientation
4. Electrical resistivity
5. Polishing Side (SSP or DSP )
6. Quantity
